EFA025A-70 updated 04/28/2006 low distortion gaas power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised may 2006 features ? none-hermetic low cost ceramic 70mil package ? +20.0 dbm output power at 1db compression ? 10.0 db power gain at 12ghz ? 7.0 db power gain at 18ghz ? typical 1.50 db noise figure and 10.0 db associated gain at 12ghz ? 0.3 x 250 micron recessed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxial heterojunction profile provides high power efficiency, linearity and reliability electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameters/test conditions 1 min typ max units 20.0 p 1db output power at 1db compression f = 12ghz v ds = 6v, i ds 50% i dss f = 18ghz 17.0 20.0 dbm g 1db gain at 1db compression f = 12ghz v ds = 6v, i ds 50% i dss f = 18ghz 8.5 10.0 7.0 db pae power added efficiency at 1db compression v ds = 6v, i ds 50% i dss f = 12ghz 35 % nf noise figure v ds = 3v, i ds = 15ma f = 12ghz 1.5 db ga associate gain v ds = 3v, i ds = 15ma f = 12ghz 10 db i dss saturated drain current v ds = 3 v, v gs = 0 v 35 65 105 ma g m transconductance v ds = 3 v, v gs = 0 v 30 40 ms v p pinch-off voltage v ds = 3 v, i ds = 1.0 ma -2.0 -3.5 v bv gd drain breakdown voltage i gd = 1.0ma -10 -15 v bv gs source breakdown voltage i gs = 1.0ma -6 -14 v r th thermal resistance 370* o c/w notes: * overall rth depends on case mounting. maximum ratings at 25 o c symbol characteristic value v ds drain to source voltage 6 v v gs gate to source voltage -4 v i ds drain current 52 ma i gsf forward gate current 1 ma p in input power @ 3db compression p t total power dissipation 310 mw t ch channel temperature 150c t stg storage temperature -65/+150c note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the ab ove ratings may reduce mttf below design goals.
EFA025A-70 updated 04/28/2006 low distortion gaas power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised may 2006 s-parameters vds = 3v, ids 15ma freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 1.0 1.020 -17.0 4.385 159.6 0.030 75.6 0.549 -22.5 2.0 0.956 -37.8 3.291 142.6 0.043 64.4 0.611 -28.0 3.0 0.911 -56.4 3.114 125.5 0.060 52.4 0.601 -41.2 4.0 0.867 -73.0 2.944 109.6 0.072 42.4 0.577 -52.4 5.0 0.814 -89.2 2.856 93.8 0.084 32.3 0.535 -63.9 6.0 0.748 -105.5 2.697 78.2 0.089 22.3 0.514 -78.5 7.0 0.689 -124.2 2.523 64.0 0.092 14.6 0.511 -85.8 8.0 0.656 -144.7 2.424 49.6 0.096 6.5 0.489 -92.9 9.0 0.636 -151.0 2.334 36.0 0.098 -2.9 0.384 -111.2 10.0 0.584 -166.5 2.283 21.7 0.096 -4.4 0.390 -131.4 11.0 0.545 164.8 2.150 7.2 0.095 -10.8 0.432 -132.6 12.0 0.552 142.3 2.040 -5.8 0.095 -15.2 0.409 -133.6 13.0 0.589 134.6 1.982 -20.5 0.102 -21.4 0.351 -168.6 14.0 0.563 120.6 1.877 -36.0 0.100 -31.0 0.371 162.5 15.0 0.571 96.0 1.672 -50.1 0.096 -35.6 0.387 166.7 16.0 0.607 73.2 1.625 -63.4 0.098 -41.9 0.374 168.3 17.0 0.625 77.3 1.617 -78.1 0.108 -49.6 0.392 116.3 18.0 0.618 58.5 1.411 -92.5 0.105 -58.9 0.476 108.4 19.0 0.643 42.1 1.361 -102.2 0.109 -68.8 0.428 110.5 20.0 0.691 26.8 1.329 -116.0 0.103 -80.6 0.411 101.9 21.0 0.653 22.4 1.294 -135.8 0.105 -95.7 0.539 62.8 22.0 0.634 13.4 1.160 -146.5 0.103 -105.5 0.620 64.2 23.0 0.655 -8.1 1.172 -161.2 0.110 -120.8 0.479 61.0 24.0 0.646 -25.3 1.170 178.6 0.119 -141.1 0.478 34.5 25.0 0.563 -39.9 1.074 160.7 0.118 -159.4 0.624 17.3 26.0 0.596 -47.4 1.048 149.8 0.132 -169.1 0.562 15.8
EFA025A-70 updated 04/28/2006 low distortion gaas power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised may 2006 s-parameters vds = 3v, ids ? idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 1.0 0.985 -18.8 3.482 161.4 0.013 76.6 0.803 -11.3 2.0 0.953 -38 3.329 142.7 0.025 65.9 0.786 -24.1 3.0 0.913 -56 3.108 125.5 0.031 54.2 0.768 -36 4.0 0.872 -73.2 2.97 109.5 0.037 46.2 0.755 -45.6 5.0 0.825 -89.3 2.867 94.3 0.04 38.8 0.731 -54.5 6.0 0.779 -102.7 2.713 79.7 0.04 34.4 0.703 -66.2 7.0 0.734 -117.1 2.559 65.3 0.039 30.9 0.685 -76.8 8.0 0.688 -130.5 2.448 52.1 0.033 33.5 0.66 -85.6 9.0 0.642 -152.3 2.42 37.6 0.037 44.6 0.661 -91.4 10.0 0.614 -173.2 2.355 21.8 0.044 48.1 0.654 -102.2 11.0 0.591 177.4 2.312 8.6 0.054 50.4 0.642 -117.7 12.0 0.572 163.7 2.282 -5.4 0.071 50.2 0.641 -131.9 13.0 0.598 138.2 2.188 -22 0.086 40.5 0.638 -144.4 14.0 0.631 115.4 2.036 -38.8 0.097 29.4 0.642 -158.9 15.0 0.631 102.2 1.97 -54.9 0.112 18.3 0.667 179.8 16.0 0.634 87.3 1.909 -72.4 0.126 5.6 0.685 158.4 17.0 0.658 70.3 1.685 -87.7 0.128 -2.1 0.665 145.1 18.0 0.694 59 1.58 -99.5 0.15 -17.2 0.731 132.5 19.0 0.672 42 1.467 -116.1 0.137 -30.5 0.761 113.1 20.0 0.707 25.5 1.399 -132.9 0.143 -43.3 0.836 96.6 21.0 0.761 14.9 1.29 -148.4 0.143 -56.3 0.826 84.7 22.0 0.736 3.9 1.184 -161.3 0.138 -68.7 0.83 76 23.0 0.703 -15.3 1.103 -178.5 0.134 -84.6 0.824 58.8 24.0 0.723 -33.5 1.043 162.6 0.134 -101.6 0.841 41.2 25.0 0.705 -44.7 1.017 146.3 0.14 -117.8 0.843 28.4 26.0 0.676 -59.8 1.017 131.8 0.156 -131 0.831 16.6 noise-parameters vds = 3v, ids 15ma freq gamma opt nfmin (ghz) mag ang (db) rn/50 2 0.83 28 0.53 0.58 4 0.75 59 0.65 0.48 6 0.65 85 0.85 0.33 8 0.58 128 1.05 0.21 10 0.45 147 1.35 0.11 12 0.40 -170 1.55 0.10 14 0.41 -111 1.90 0.27 16 0.47 -69 2.25 0.58 18 0.53 -44 2.60 1.00 20 0.62 -14 2.90 1.38 22 0.57 1 3.20 1.68 24 0.59 39 3.50 1.77 26 0.57 66 3.80 1.10
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